IS62WV25616ALLIS62WV25616BLL256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
•High-speed access time: 55ns, 70ns•CMOS low power operation36 mW (typical) operating9 µW (typical) CMOS standby•TTL compatible interface levels•Single power supply
1.65V--2.2V VDD (IS62WV25616ALL)2.5V--3.6V VDD (IS62WV25616BLL)•Fully static operation: no clock or refreshrequired•Three state outputs
•Data control for upper and lower bytes•Industrial temperature available•Lead-free available
ISSI
MAY 2005
®
DESCRIPTION
The ISSI IS62WV25616ALL/IS62WV25616BLL are high-speed, low power, 4M bit SRAMs organized as 256K wordsby 16 bits. It is fabricated using ISSI's high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS1 is LOW andboth LB and UB are HIGH, the device assumes a standbymode at which the power dissipation can be reduced downwith CMOS input levels.
Easy memory expansion is provided by using Chip Enableand Output Enable inputs. The active LOW Write Enable(WE) controls both writing and reading of the memory. Adata byte allows Upper Byte (UB) and Lower Byte (LB)access.
The IS62WV25616ALL/IS62WV25616BLL are packaged inthe JEDEC standard 44-Pin TSOP (TYPE II) and 48-pinmini BGA (6mmx8mm).
FUNCTIONAL BLOCK DIAGRAMA0-A17DECODER256K x 16MEMORY ARRAYVDDGNDI/O0-I/O7Lower ByteI/O8-I/O15Upper ByteI/ODATACIRCUITCOLUMN I/OCS1OEWEUBLBCONTROLCIRCUITCopyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
1
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IS62WV25616ALL, IS62WV25616BLL
PIN CONFIGURATIONS
48- ball mini BGA (6mm x 8mm)(Package Code B)
1 2 3 4 5 6ISSI
44-Pin mini TSOP (Type II)(Package Code T)
A4A3A2A1A0CS1I/O0I/O1I/O2I/O3VDDGNDI/O4I/O5I/O6I/O7WEA16A15A14A13A121234567891011121314151617181920212244434241403938373635343332313029282726252423A5A6A7OEUBLBI/O15I/O14I/O13I/O12GNDVDDI/O11I/O10I/O9I/O8NCA8A9A10A11A17®
ABCDEFGHLBI/O8I/O9GNDVDDI/O14I/O15NCOEUBI/O10I/O11I/O12I/O13NCA8A0A3A5A17NCA14A12A9A1A4A6A7A16A15A13A10A2CSII/O1I/O3I/O4I/O5WEA11NCI/O0I/O2VDDGNDI/O6I/O7NCPIN DESCRIPTIONS
A0-A17I/O0-I/O15CS1OEWELBUBNCVDDGND
Address InputsData Inputs/OutputsChip Enable InputOutput Enable InputWrite Enable Input
Lower-byte Control (I/O0-I/O7)Upper-byte Control (I/O8-I/O15)No ConnectionPowerGround
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
TRUTH TABLE
ModeNot SelectedOutput DisabledRead
WEXXHHHHHLLL
CS1HXLLLLLLLL
OEXXHHLLLXXX
LBXHLXLHLLHL
UBXHXLHLLHLL
I/O PIN
I/O0-I/O7I/O8-I/O15High-ZHigh-ZHigh-ZHigh-ZDOUTHigh-ZDOUTDINHigh-ZDIN
High-ZHigh-ZHigh-ZHigh-ZHigh-ZDOUTDOUTHigh-ZDINDIN
ISSI
VDD CurrentISB1, ISB2ISB1, ISB2
ICCICCICC
®
WriteICC
ABSOLUTE MAXIMUM RATINGS(1)
SymbolVTERMVDDTSTGPT
Parameter
Terminal Voltage with Respect to GNDVDD Related to GNDStorage TemperaturePower Dissipation
Value
–0.2 to VDD+0.3–0.2 to VDD+0.3–65 to +150
1.0
UnitVV°CW
Note:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. Thisis a stress rating only and functional operation of the device at these or any other conditions above those indicated in theoperational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extendedperiods may affect reliability.
OPERATING RANGE (VDD)
RangeCommercialIndustrial
Ambient Temperature
0°C to +70°C–40°C to +85°C
IS62WV25616ALL1.65V - 2.2V1.65V - 2.2V
IS62WV25616BLL
2.5V-3.6V2.5V-3.6V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
SymbolParameterVOHVOLVIHVIL(1)ILIILO
Output HIGH VoltageOutput LOW VoltageInput HIGH VoltageInput LOW VoltageInput LeakageOutput Leakage
GND ≤ VIN ≤ VDD
GND ≤ VOUT ≤ VDD, Outputs DisabledTest ConditionsIOH = -0.1 mAIOH = -1 mAIOL = 0.1 mAIOL = 2.1 mA
VDD1.65-2.2V2.5-3.6V1.65-2.2V2.5-3.6V1.65-2.2V2.5-3.6V1.65-2.2V2.5-3.6V
Min.1.42.2——1.42.2–0.2–0.2–1–1
Max.——0.20.4VDD + 0.2VDD + 0.30.40.611
UnitVVVVVVVVµAµA
Notes: 1. VIL (min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
SymbolICCICC1ParameterVDD Dynamic OperatingSupply CurrentOperating SupplyCurrentTTL Standby Current(TTL Inputs)Test ConditionsVDD = Max.,Com.IOUT = 0 mA, f = fMAXInd.VDD = Max., CS1 = 0.2VCom.WE = VDD-0.2VInd.f=1MHZVDD = Max.,Com.VIN = VIH or VILInd.CS1 = VIH , f = 1 MHZ ORVDD = Max., VIN = VIH or VILCS1 = VIL, f = 0, UB = VIH, LB = VIHVDD = Max.,Com.CS1 ≥ VDD – 0.2V,Ind.VIN ≥ VDD – 0.2V, orVIN ≤ 0.2V, f = 0ORVDD = Max., CS1 = VIL,
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2VMax.70253010100.350.35ISSI
UnitmAmA®
ISB1mAULB Control
ISB2CMOS StandbyCurrent (CMOS Inputs)1515µAULB Control
IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
SymbolICCICC1ParameterVDD Dynamic OperatingSupply CurrentOperating SupplyCurrentTTL Standby Current(TTL Inputs)Test ConditionsVDD = Max.,IOUT = 0 mA, f = fMAXVDD = Max., CS1 = 0.2VWE = VDD-0.2Vf=1MHZVDD = Max.,VIN = VIH or VILCS1 = VIH, f = 1 MHZCom.Ind.Com.Ind.Com.Ind.OR
ULB Control
ISB2CMOS StandbyCurrent (CMOS Inputs)VDD = Max., VIN = VIH or VILCS1 = VIL, f = 0, UB = VIH, LB = VIHVDD = Max.,Com.CS1 ≥ VDD – 0.2V,Ind.VIN ≥ VDD – 0.2V, orVIN ≤ 0.2V, f = 0ORVDD = Max., CS1 = VIL,
VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2VMax.55404515150.350.35Max.70354015150.350.35UnitmAmAISB1mA15151515µAULB Control
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
CAPACITANCE(1)
SymbolCINCOUT
ParameterInput CapacitanceInput/Output Capacitance
ConditionsVIN = 0VVOUT = 0V
Max.810
UnitpFpF
ISSI
®
Note:
1.Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall TimesInput and Output Timingand Reference LevelOutput Load
IS62WV25616ALL
(Unit)
0.4V to VDD-0.2V
5 nsVREFSee Figures 1 and 2
IS62WV25616BLL
(Unit)
0.4V to VDD-0.3V
5nsVREFSee Figures 1 and 2
IS62WV25616ALL
1.65V-2.2V
R1(Ω)R2(Ω)VREFVTM
307031500.9V1.8V
IS62WV25616BLL
2.5V - 3.6V
307031501.5V2.8V
AC TEST LOADSR1VTMOUTPUT30 pFIncludingjig andscopeR2VTMOUTPUT5 pFIncludingjig andscopeR2R1Figure 1Figure 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
ParameterRead Cycle TimeAddress Access TimeOutput Hold TimeCS1 Access TimeOE Access TimeOE to High-Z OutputOE to Low-Z OutputCS1 to High-Z OutputCS1 to Low-Z OutputLB, UB Access TimeLB, UB to High-Z OutputLB, UB to Low-Z Output
55 nsMin.Max.55—10———5010—00
—55—552520—20—5520—
70 nsMin.Max.70—10———5010—00
—70—703525—25—7025—
ISSI
Unitnsnsnsnsnsnsnsnsnsnsnsns
®
tRCtAAtOHAtACS1tDOEtHZOE(2)tLZOE(2)tHZCS1tLZCS1tBAtHZBtLZB
Notes:
1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 toVDD-0.2V/VDD-0.3V and output loading specified in Figure 1.
2.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, WE = VIH, UB or LB = VIL)
ISSI
®
tRCADDRESStAAtOHAtOHADATA VALIDDOUTPREVIOUS DATA VALIDREAD CYCLE NO. 2(1,3)(CS1, OE, AND UB/LB Controlled)
tRCADDRESStAAtOHAOEtDOEtHZOECS1tACE1tLZCE1tLZOEtHZCS1LB, UBtLZBtBAtHZBDOUTHIGH-ZDATA VALIDNotes:
1.WE is HIGH for a Read Cycle.
2.The device is continuously selected. OE, CS1, UB, or LB = VIL. WE=VIH.3.Address is valid prior to or coincident with CS1 LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
Symbol
ParameterWrite Cycle TimeCS1 to Write End
Address Setup Time to Write EndAddress Hold from Write EndAddress Setup TimeLB, UB Valid to End of WriteWE Pulse WidthData Setup to Write EndData Hold from Write EndWE LOW to High-Z OutputWE HIGH to Low-Z Output
55 nsMin.Max. 55 45450 045 40 250— 5
—————————20—
70 ns Min.Max. 70 60 60 0 0 60 50 30 0 — 5
—————————20—
ISSI
Unitnsnsnsnsnsnsnsnsnsnsns
®
tWCtSCS1
tAWtHAtSAtPWBtPWEtSDtHDtHZWE(3)tLZWE(3)
Notes:
1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V toVDD-0.2V/VDD-0.3V and output loading specified in Figure 1.
2.The internal write time is defined by the overlap of CS1 LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one cango inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.3.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CS1 Controlled, OE = HIGH or LOW)
tWCISSI
®
ADDRESStSCS1tHACS1tAWWELB, UBtSAtHZWEtPWEtPWBtLZWEHIGH-ZDOUTDATA UNDEFINEDtSDtHDDINDATA-IN VALIDNotes:1.WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 and WE inputs and atleast one of the LB and UB inputs being in the LOW state.2.WRITE = (CS1) [ (LB) = (UB) ] (WE).
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
tWCADDRESSOEtSCS1tHACS1tAWWEtPWELB, UBtSAtHZWEHIGH-ZtLZWEDOUTDATA UNDEFINEDtSDtHDDINDATA-IN VALIDIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
tWCISSI
®
ADDRESSOEtSCS1tHACS1tAWWEtPWELB, UBtSAtHZWEHIGH-ZtLZWEDOUTDATA UNDEFINEDtSDtHDDINDATA-IN VALIDWRITE CYCLE NO. 4 (UB/LB Controlled)
t WCADDRESSADDRESS 1t WCADDRESS 2OEt SACS1LOWWEt HAt SAt PBWt PBWWORD 2t HAUB, LBWORD 1t HZWEDOUTDATA UNDEFINEDHIGH-Zt LZWEt HDDATAINVALIDt SDDINt SDDATAINVALIDt HDUB_CSWR4.eps10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
元器件交易网www.cecb2b.com
IS62WV25616ALL, IS62WV25616BLL
DATA RETENTION SWITCHING CHARACTERISTICS
SymbolParameterVDD for Data RetentionData Retention CurrentData Retention Setup TimeRecovery TimeTest ConditionSee Data Retention WaveformVDD = 1.2V, CS1 ≥ VDD – 0.2VSee Data Retention WaveformSee Data Retention WaveformMin.1.2—0Max.3.615——UnitVµAnsnsISSI
®
VDRIDRtSDRtRDRtRCDATA RETENTION WAVEFORM (CS1 Controlled)
tSDRVDDData Retention ModetRDRVDRCS1 ≥ VDD - 0.2VCS1GNDIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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IS62WV25616ALL, IS62WV25616BLL
ORDERING INFORMATIONIS62WV25616ALL (1.65V-2.2V)Commercial Range: 0°C to +70°C
Speed (ns)
70
Order Part No.IS62WV25616ALL-70T
PackageTSOP
ISSI
®
Industrial Range: –40°C to +85°C
Speed (ns)
7070
Order Part No.IS62WV25616ALL-70TIIS62WV25616ALL-70BI
PackageTSOP
mini BGA (6mmx8mm)
IS62WV25616BLL (2.5V - 3.6V)Commercial Range: 0°C to +70°C
Speed (ns)
5570
Order Part No.IS62WV25616BLL-55TIS62WV25616BLL-70T
PackageTSOPTSOP
Industrial Range: –40°C to +85°C
Speed (ns)
55555555
Order Part No.IS62WV25616BLL-55TIIS62WV25616BLL-55TLIIS62WV25616BLL-55BIIS62WV25616BLL-55BLI
PackageTSOP
TSOP, Lead-freemini BGA (6mmx8mm)
mini BGA (6mmx8mm), Lead-free
12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C05/02/05
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PACKAGING INFORMATION
Mini Ball Grid Array
Package Code: B (48-pin)
Top View1 2 3 4 5 6ISSI
Bottom Viewφ b (48x)®
6 5 4 3 2 1ABCDDEFGHD1eABCDEFGHeEE1A2SEATING PLANEA1ANotes:1. Controlling dimensions are in millimeters.mBGA - 6mm x 8mmMILLIMETERSSym.N0.LeadsAA1A2DD1EE1eb— 0.240.607.905.90mBGA - 8mm x 10mmINCHESMin.Typ.Max.Sym.N0.LeadsMILLIMETERMin.Typ.Max. 48— 0.240.609.907.90—————1.200.30—10.108.10—INCHESMin.Typ.Max.Min.Typ.Max.48—————1.200.30—8.106.10—0.0090.0240.3110.232 — ————0.0470.012—0.3190.240AA1A2DD1EE1eb — ————0.0470.012—0.3980.3190.0090.0240.3900.3115.25 BSC3.75 BSC0.75 BSC0.300.350.400.207 BSC0.148 BSC0.030 BSC0.0120.0140.0165.25 BSC3.75 BSC0.75 BSC0.300.350.400.207 BSC0.148 BSC0.030 BSC0.0120.0140.016Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.D01/15/03
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PACKAGING INFORMATION
Plastic TSOPPackage Code: T (Type II)ISSI
Notes:1.Controlling dimension: millimieters,unless otherwise specified.2.BSC = Basic lead spacingbetween centers.3.Dimensions D and E1 do notinclude mold flash protrusions andshould be measured from thebottom of the package.4.Formed leads shall be planar withrespect to one another within0.004 inches at the seating plane.®
NN/2+1E1E1DN/2ZDASEATING PLANE.ebA1LαCSymbolRef. Std.No. Leads (N)324450A—1.20—0.047—1.20—0.047—1.20—0.047A10.050.150.0020.0060.050.150.0020.0060.050.150.0020.006b0.300.520.0120.0200.300.450.0120.0180.300.450.0120.018C0.120.210.0050.0080.120.210.0050.0080.120.210.0050.008D20.8221.080.8200.83018.3118.520.7210.72920.8221.080.8200.830E110.0310.290.3910.40010.0310.290.3950.40510.0310.290.3950.405E11.5611.960.4510.46611.5611.960.4550.47111.5611.960.4550.471e1.27 BSC 0.050 BSC 0.80 BSC0.032 BSC0.80 BSC 0.031 BSCL0.400.600.0160.0240.410.600.0160.0240.400.600.0160.024ZD 0.95 REF 0.037 REF 0.81 REF 0.032 REF 0.88 REF 0.035 REFα0°5°0°5°0°5°0°5°0°5°0°5°MillimetersMinMaxInchesMinMaxPlastic TSOP (T - Type II)MillimetersInchesMinMaxMinMaxMillimetersMinMaxInchesMinMaxCopyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.F06/18/03
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