1N5820 - 1N5822
3.0ASCHOTTKYBARRIER RECTIFIERS
Features
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SchottkyBarrier Chip
Guard Ring Die Construction for Transient ProtectionLow Power Loss, High EfficiencyHigh Surge Capability
High Current Capability and Low Forward Voltage DropFor Use in Low Voltage, High FrequencyInverters, FreeWheeling, and Polarity Protection ApplicationLead Free Finish,RoHSCompliant (Note 4)
ABADCMechanical Data
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Case: DO-201AD
Case Material: Molded Plastic. ULFlammabilityClassification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated LeadsSolderableperMIL-STD-202, Method 208Polarity: Cathode BandMounting Position: AnyMarking: Type Number
Ordering Information: See Last PageWeight: 1.1 grams (approximate)
@ TA= 25°C unless otherwise specified
DimABCDDO-201ADMin25.407.201.204.80Max¾9.501.305.30All Dimensions in mmMaximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
CharacteristicPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageRMS Reverse VoltageAverage Rectified Output Current(Note 1)@ TL= 95°CNon-Repetitive Peak Forward Surge Current 8.3mssingle half sine-wave superimposed on rated load(JEDECMethod)@ TL= 75°CForward Voltage (Note 2)Peak Reverse Currentat Rated DC Blocking Voltage (Note 2)Typical Thermal Resistance (Note 3)Operating and Storage Temperature Range@ IF= 3.0A@ IF= 9.4A@ TA= 25°C@ TA= 100°CSymbolVRRMVRWMVRVR(RMS)IOIFSMVFMIRMRqJARqJLTj,TSTG1N582020141N582130213.0801N58224028UnitVVAA0.4750.8500.5000.9002.0204010-65 to +1250.5250.950VmA°C/W°CNotes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration pulse test used to minimize self-heating effect.
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500\" (12.7mm) lead length with 2.5 x 2.5\" (63.5 x 63.5mm)
copper pad.
4.RoHSrevision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, seeEU Directive Annex Notes 5 and 7.DS23003 Rev. 8 - 2
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1N5820-1N5822
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I(AV),AVERAGEOUTPUTCURRENT(A)SinglePhaseHalf-Wave60HzResistiveorInductiveLoad9.5mmLeadLengthIF,INSTANTANEOUSFORWARDCURRENT(A)4
30
3
10
2
1.0
1
010
50
100
150
TL,LEADTEMPERATURE(ºC)Fig.1ForwardCurrentDeratingCurve
0.1
0.1
0.3
0.5
0.7
0.9
1.1
VF,INSTANTANEOUSFORWARDVOLTAGE(V)Fig.2TypicalForwardVoltageCharacteristics
IFSM,PEAKFORWARDSURGECURRENT(A)100
1000
Tj=25ºCf=1MHzVsig=50mVp-p60
CT,TOTALCAPACITANCE(pF)80
100
40
20
8.3msSingleHalfSine-WaveJEDECMethodTJ=TJ(max)0
110
NUMBEROFCYCLESAT60HzFig.3PeakForwardSurgeCurrent
100
100.11.010100VR,REVERSEVOLTAGE(V)Fig.4TypicalTotalCapacitance
Ordering Information
Device1N5820-B1N5820-T1N5821-B1N5821-T1N5822-B1N5822-T(Note 5)
PackagingDO-201ADDO-201ADDO-201ADDO-201ADDO-201ADDO-201ADShipping500 Bulk1.2K/Tape & Reel, 13-inch500 Bulk1.2K/Tape & Reel, 13-inch500 Bulk1.2K/Tape & Reel, 13-inchNotes: 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf
DS23003 Rev. 8 - 2
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1N5820-1N5822
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