专利名称：Magnetoresistive random access memory
with shared word and digit lines
发明人：Peter K. Naji申请号：US09/1177申请日：19980720公开号：US05946227A公开日：19990831
摘要：A high speed and high density magnetoresistive random access memory(MRAM) device (30) is provided. The MRAM device employs a poly- silicon word line (39a)that saves wiring space. Further, the word line is connected to a digit line (38a) by aconnecting line (44a) which reduces a electrical resistance between transistors (43a) and(40a). Arrangement of the connecting line reduces a transmission time from a digitcurrent control (33a) to transistor (43a) and greatly improves a memory cycle time.
申请人：MOTOROLA, INC.
代理人：Eugene A. Parsons,William E. Koch
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