Transistor with nitrogen-hardened gate oxide

专利名称：Transistor with nitrogen-hardened gate

oxide

发明人：John T. Moore申请号：US10791400申请日：20040302

公开号：US20040173861A1公开日：20040909

专利附图：

摘要：The present invention provides an improved surface P-channel transistor and amethod of making the same. A preferred embodiment of the method of the presentinvention includes providing a semiconductor substrate, forming a gate oxide layer over

the semiconductor substrate, subjecting the gate oxide layer to a remote plasmanitrogen hardening treatment followed by an oxidative anneal, and forming a polysiliconlayer over the resulting gate oxide layer. Significantly, the method of the presentinvention does not require nitrogen implantation through the polysilicon layer overlyingthe gate oxide and provides a surface P-channel transistor having a polysilicon electrodefree of nitrogen and a hardened gate oxide layer characterized by a large concentrationof nitrogen at the polysilicon electrode/gate oxide interface and a small concentration ofnitrogen at the gate oxide/semiconductor substrate interface. The method of thepresent invention is easily incorporated into known fabrication processes and provides anenhanced surface P-channel transistor that resists hot electron degradation, is

substantially impermeable to dopants included in overlying layers, and is characterizedby a greatly increased extrapolated time dependent dielectric breakdown value.

申请人：MOORE JOHN T.

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