SS8550_FAI

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

•Complimentary to SS8050•Collector Current: IC=1.5A

•Collector Power Dissipation: PC=2W (TC=25°C)

1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

SymbolVCBOVCEOVEBOICPCTJTSTG

Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector Current

Collector Power DissipationJunction TemperatureStorage Temperature

Parameter

Ratings-40-25-6-1.51150-65 ~ 150

UnitsVVVAW°C°C

Electrical Characteristics Ta=25°C unless otherwise noted

SymbolBVCBOBVCEOBVEBOICBOIEBOhFE1hFE2hFE3VCE (sat)VBE (sat)VBE (on)CobfT

Parameter

Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentEmitter Cut-off CurrentDC Current Gain

Test ConditionIC= -100µA, IE=0IC= -2mA, IB=0IE= -100µA, IC=0VCB= -35V, IE=0VEB= -6V, IC=0VCE= -1V, IC= -5mAVCE= -1V, IC= -100mAVCE= -1V, IC= -800mAIC= -800mA, IB= -80mAIC= -800mA, IB= -80mAVCE= -1V, IC= -10mAVCB= -10V, IE=0f=1MHz

VCE= -10V, IC= -50mA

100458540

17016080-0.28-0.98-0.6615200

Min.-40-25-6

-100-100300-0.5-1.2-1.0

VVVpFMHz

Typ.

Max.

UnitsVVVnAnA

Collector-Emitter Saturation VoltageBase-Emitter Saturation VoltageBase-Emitter on VoltageOutput Capacitance

Current Gain Bandwidth Product

hFEClassification

Classification

hFE2

B85 ~ 160

C120 ~ 200

D160 ~ 300

©2002 Fairchild Semiconductor CorporationRev. A2, November 2002

SS8550Typical Characteristics -0.51000 VCE = -1VIB=-4.0mAIC[mA], COLLECTOR CURRENT-0.4IB=-3.5mAIB=-3.0mAhFE, DC CURRENT GAIN100-0.3IB=-2.5mAIB=-2.0mA -0.2IB=-1.5mAIB=-1.0mA10-0.1IB=-0.5mA-0.4-0.8-1.2-1.6-2.01-0.1-1-10-100-1000VCE[V], COLLECTOR-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current Gain -10000-100 IC=10IBVCE = -1VVBE(sat), VCE(sat)[V], SATURATION VOLTAGE-1000IC[mA], COLLECTOR CURRENT-10VBE(sat)-100 -1VCE(sat)-10-0.1-1-10-100-1000-0.1-0.0-0.2-0.4-0.6-0.8-1.0-1.2IC[mA], COLLECTOR CURRENTVBE[V], BASE-EMITTER VOLTAGEFigure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation VoltageFigure 4. Base-Emitter On Voltage100fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHzIE=0 1000VCE=-10VCob[pF], CAPACITANCE10100 1-1-10-100-100010-1-10-100-1000VCB[V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 5. Collector Output CapacitanceFigure 6. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A2, November 2002

SS8550Package DimensionsTO-924.58–0.15+0.250.46 ±0.1014.47 ±0.404.58 ±0.201.27TYP[1.27 ±0.20]3.60 ±0.201.27TYP[1.27 ±0.20]0.38–0.05+0.103.86MAX1.02 ±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

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PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

Product StatusFormative or In DesignFirst Production

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Preliminary

No Identification NeededFull Production

ObsoleteNot In Production

©2002 Fairchild Semiconductor CorporationRev. I1