Advance Product InformationApril 5, 200613 - 17 GHz 2.5 Watt, 25dB Power Amplifier TGA2505Key Features and Performance•••••34 dBm Midband Pout25 dB Nominal Gain7 dB Typical Input Return Loss12 dB Typical Output Return LossBuilt-in Directional Power Detectorwith Reference•0.25µm pHEMT Technology•Bias Conditions: 7V, 640mA•Chip dimensions: 2.03 x 1.39 x 0.10 mm (0.080 x 0.055 x 0.004 inches)S11, S22 (dB)Preliminary Measured Performance302520151050111213141516171819Bias Conditions: Vd=7V Id=640mA105S21 (dB)S21S11S220-5-10-15-20Primary Applications••VSATPoint-to-PointFrequency (GHz)353433323130292827262511121314151617181960555045PsatPAE40353025201510Frequency (GHz)Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject tochange without notice.PAE@Psat (%)Psat (dBm)TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com1元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006TABLE I MAXIMUM RATINGSSymbolV+V-I+| IG |PINPDTCHTMTSTGParameter 1/Positive Supply VoltageNegative Supply Voltage RangePositive Supply Current (Quiescent)Gate Supply CurrentInput Continuous Wave PowerPower DissipationOperating Channel TemperatureMounting Temperature(30 Seconds)Storage TemperatureValue8 V-5V to 0V1300 mA18 mA24 dBm6.43 W150 0C320 0C-65 to 150 0C2/2/ 3/4/5/2/TGA2505Notes2/ 1/ These ratings represent the maximum operable values for this device.2/ Combinations of supply voltage, supply current, input power, and output powershall not exceed PD.3/When operated at this bias condition with a base plate temperature of 70°C, themedian life is reduced from 8.9E+6 to 1E+6.Junction operating temperature will directly affect the device median time tofailure (TM). For maximum life, it is recommended that junction temperatures bemaintained at the lowest possible levels.TABLE IIDC PROBE TEST(TA = 25 °C, Nominal)NOTES1/1/2/2/2/SYMBOLIDSSGM|VP||VBVGS||VBVGD|MIN801750.5813LIMITSMAX3814251.53030UNITSmAmSVVV4/ These ratings apply to each individual FET.5/1/Measurements are performed on a 800µm FET.2/VP, VBVGD, and VBVGS are negative.TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com2元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006TGA2505TABLE IIIRF CHARACTERIZATION TABLE(TA = 25qC, Nominal)(Vd = 7V, Id = 640mA r5%)SYMBOLPARAMETERTEST CONDITIONLIMITSTYP25UNITSGainSmall Signal GainF = 13 – 17 GHzdBIRLInput Return LossF = 13 – 17 GHz7dBORLOutput Return LossOutput Power @Pin = +15 dBmF = 13 – 17 GHz12dBPWRF = 13 – 17 GHz34dBmNote: Table III Lists the RF Characteristics of typical devices as determined byfixtured measurements.TABLE IVTHERMAL INFORMATIONPARAMETERRθjc Thermal Resistance(Channel to Backside)TEST CONDITIONVD = 7VID = 640mAPD = 4.48WTCH (qC)125.74RTjc(qC/W)12.44MTTF(HRS)8.9E+6Note:Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at70°C baseplate temperature. Worst case condition with no RF applied, 100% of DCpower is dissipated.TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com3元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006Typical Fixtured Performance302928272625242322212019181716151112131415161718TGA2505S21 (dB)19Frequency (GHz)0-5S11S22S11,S22 (dB)-10-15-20-25-30111213141516171819Frequency (GHz)TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com4元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006Typical Fixtured Performance3534.53433.5TGA2505PsatP2dBPout (dBm)3332.53231.53130.530111213141516171819Frequency (GHz)403530PAE @ PsatPAE @ P2dBPAE (%)25201510111213141516171819Frequency (GHz)TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com5元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006Typical Fixtured Performance3735TGA25052600240022002000Output Power (dBm)333129272523211917-5-313.5 GHz14.0 GHz14.5 GHz1600140012001000800600-1135791113151719Input power (dBm)Id (mA)61800TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006Typical Fixtured Performance18126TGA2505IMD3 (dBm)0-6-12-18-24-30-36161820222426283013GHz14GHz15GHzOutput power/tone (dBm)454443IP3 Avg (dBm)4241403938373635111213141516171819Frequency (GHz)TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com7元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006Mechanical Drawing$ Ã#&\"!\"\"Ã(#'\"!&Ã!' # !'\"Ã$ TGA2505 \"(Ã$$ !(\"Ã$ %($Ã!& $%('Ã!&(&Ã#ÃÃ#Ã$('( Ã#(#&\"Ã &&%%&Ã$\"( 'Ã\"! %Ã#8QLWVPLOOLPHWHUVLQFKHV7KLFNQHVV&KLSHGJHWRERQGSDGGLPHQVLRQVDUHVKRZQWRFHQWHURIERQGSDG&KLSVL]HWROHUDQFH*1',6%$&.6,'(2)00,&%RQGSDG5),QSXW[[%RQGSDG9UHI[[%RQGSDG9G[[%RQGSDG9G[[%RQGSDG5)2XWSXW[[%RQGSDG9GHW[[%RQGSDG9J[[%RQGSDG9J[[TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com8元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006Power Detector+5VTGA250540K:40K:VrefVdetExternalMMIC5pF50:DUTRF outTGA2505 Power Detector @ 14GHz0.60.5Vref-Vdet (V)0.40.30.20.100(20 dBm)10(26 dBm)20(29.5 dBm)(32 dBm)(34 dBm)30405060sqrt Pout (mW^0.5)TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com9元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006TGA2505Chip Assembly & Bonding DiagramVd100pFOff chipR=10:Off chipC=0.1PFInput TFNOutput TFNVgOff chipR=10:Off chipC=0.1PF100pFGaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com10元器件交易网www.cecb2b.com
Advance Product InformationApril 5, 2006TGA2505Assembly Process NotesReflow process assembly notes:• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.(30 seconds maximum)• An alloy station or conveyor furnace with reducing atmosphere should be used.• No fluxes should be utilized.• Coefficient of thermal expansion matching is critical for long-term reliability.• Devices must be stored in a dry nitrogen atmosphere.Component placement and adhesive attachment assembly notes:• • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up.Air bridges must be avoided during placement.The force impact is critical during auto placement.Organic attachment can be used in low-power applications.Curing should be done in a convection oven; proper exhaust is a safety concern.Microwave or radiant curing should not be used because of differential heating.Coefficient of thermal expansion matching is critical.Interconnect process assembly notes:• • • • • Thermosonic ball bonding is the preferred interconnect technique.Force, time, and ultrasonics are critical parameters.Aluminum wire should not be used.Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.Maximum stage temperature is 200°C.GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com11
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