1N5913B Series
3 W DO−41 Surmetict 30Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits andexcellent operating characteristics that reflect the superior capabilitiesof silicon−oxide passivated junctions. All this in an axial−lead,transfer−molded plastic package that offers protection in all commonenvironmental conditions.
Features
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CathodeAnode••••••
Zener Voltage Range − 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body ModelSurge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical ParametersPackage No Larger than the Conventional 1 W PackagePb−Free Packages are Available
Mechanical Characteristics
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
AXIAL LEADCASE 59PLASTICSTYLE 1MARKING DIAGRAMA1N59xxBYYWWGGA= Assembly Location1N59xxB= Device NumberYY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity bandMOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Max. Steady State Power Dissipation@ TL = 75°C, Lead Length = 3/8″Derate above 75°C
Steady State Power Dissipation@ TA = 50°C
Derate above 50°COperating and StorageTemperature Range
SymbolPD
Value324
PD
16.67
TJ, Tstg
−65 to+200
UnitWmW/°CWmW/°C°C
ORDERING INFORMATION
Device1N59xxB, G1N59xxBRL, G
PackageAxial Lead(Pb−Free)Axial Lead(Pb−Free)
Shipping†2000 Units/Box6000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
Publication Order Number:
1N5913B/D
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1N5913B Series
ELECTRICAL CHARACTERISTICS
(TL = 30°C unless otherwise noted,
VF = 1.5 V Max @ IF = 200 mAdc for all types)SymbolVZIZTZZTIZKZZKIRVRIFVFIZM
Parameter
Reverse Zener Voltage @ IZTReverse Current
Maximum Zener Impedance @ IZTReverse Current
Maximum Zener Impedance @ IZKReverse Leakage Current @ VRBreakdown VoltageForward CurrentForward Voltage @ IFMaximum DC Zener Current
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1N5913B Series
ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types)
Zener Voltage (Note 2)
Device†(Note 1)1N5913B, G1N5917B, G1N5919B, G1N5920B, G1N5921B, G1N5923B, G1N5924B, G1N5925B, G1N5926B, G1N5927B, G1N5929B, G1N5930B, G1N5931B, G1N5932B, G1N5933B, G1N5934B, G1N5935B, G1N5936B, G1N5937B, G1N5938B, G1N5940B, G1N5941B, G1N5942B, G1N5943B, G1N5944B, G1N5946B, G1N5947B, G1N5948B, G1N5950B, G1N5951B, G1N5952B, G1N5953B, G1N5954B, G1N5955B, G1N5956B, G
DeviceMarking1N5913B1N5917B1N5919B1N5920B1N5921B1N5923B1N5924B1N5925B1N5926B1N5927B1N5929B1N5930B1N5931B1N5932B1N5933B1N5934B1N5935B1N5936B1N5937B1N5938B1N5940B1N5941B1N5942B1N5943B1N5944B1N5946B1N5947B1N5948B1N5950B1N5951B1N5952B1N5953B1N5954B1N5955B1N5956B
VZ (Volts)Min3.144.475.325.896.467.798.659.5010.4511.4014.2515.2017.1019.0020.9022.8025.6528.5031.3534.2040.8544.6548.4553.2058.9071.2577.9086.45104.5114123.5142.5152171190
Nom3.34.75.66.26.88.29.1101112151618202224273033364347515662758291110120130150160180200
Max3.474.945.886.517.148.619.5610.5011.5512.6015.7516.8018.9021.0023.1025.2028.3531.5034.6537.8045.1549.3553.5558.8065.1078.7586.1095.55115.5126136.5157.5168189210
@ IZTmA113.679.866.960.555.145.741.237.534.131.225.023.420.818.717.015.613.912.511.410.48.78.07.36.76.05.04.64.13.43.12.92.52.32.11.9
Zener Impedance (Note 3)ZZT @ IZT
W105222.53.544.55.56.5910121417.51923283338536770861001401602003003804506007009001200
ZZK @ IZKW50050025020020040050050055055060060065065065070070075080085095010001100130015002000250030004000450050006000650070008000
mA111110.50.50.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.250.25
Leakage Current
IR @ VRmA Max1005555555111111111111111111111111111
Volts11.5345.26.5788.49.111.412.213.715.216.718.220.622.825.127.432.735.838.842.647.15662.269.283.691.298.8114121.6136.8152
IZMmA454319267241220182164150136125100938375686255504541343129262420181613121110987
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
†The “G’’ suffix indicates Pb−Free package available.1.TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix.2.ZENER VOLTAGE (VZ) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C,3/8″ from the diode body.
3.ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of theDC zener current (IZT or IZK) is superimposed on IZT or IZK.
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1N5913B Series
PD, STEADY STATE DISSIPATION (WATTS)543L = 3/8″L = 1/8″L = LEAD LENGTH TO HEAT SINK210L = 1″020406080100120140160TL, LEAD TEMPERATURE (°C)
180200Figure 1. Power Temperature Derating Curve
θJL(t, D) TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD (° C/W)3020107532D =0.50.20.10.050.020.01D = 00.00050.0010.0020.005NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L).0.010.020.05t, TIME (SECONDS)0.10.2PPKt2DUTY CYCLE, D =t1/t2t110.70.5SINGLE PULSE DTJL = qJL (t)PPKREPETITIVE PULSES DTJL = qJL (t,D)PPK0.5125100.30.00010.0002Figure 2. Typical Thermal Response L, Lead Length = 3/8 InchIR, REVERSE LEAKAGE (μAdc) @ VRAS SPECIFIED IN ELEC. CHAR. TABLE1K3210.50.20.10.050.020.010.005TA = 125°CPP K , PEAK SURGE POWER (WATTS)500300200100503020100.10.20.30.5RECTANGULARNONREPETITIVEWAVEFORMTJ=25°C PRIORTO INITIAL PULSETA = 125°C0.0020.0010.00050.0003123510PW, PULSE WIDTH (ms)
203050100125102050100NOMINAL VZ (VOLTS)
2004001000Figure 3. Maximum Surge PowerFigure 4. Typical Reverse Leakage
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1N5913B Series
APPLICATION NOTE
Since the actual voltage available from a given zenerdiode is temperature dependent, it is necessary to determinejunction temperature under any set of operating conditionsin order to calculate its value. The following procedure isrecommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
DTJL is the increase in junction temperature above the leadtemperature and may be found from Figure 2 for a train ofpower pulses (L = 3/8 inch) or from Figure 10 for dc power.
DTJL = qJL PD
qLA is the lead-to-ambient thermal resistance (°C/W) andPD is the power dissipation. The value for qLA will vary anddepends on the device mounting method. qLA is generally30−40°C/W for the various clips and tie points in commonuse and for printed circuit board wiring.
The temperature of the lead can also be measured using athermocouple placed on the lead as close as possible to thetie point. The thermal mass connected to the tie point isnormally large enough so that it will not significantlyrespond to heat surges generated in the diode as a result ofpulsed operation once steady-state conditions are achieved.Using the measured value of TL, the junction temperaturemay be determined by:
TJ = TL + DTJL
For worst-case design, using expected limits of IZ, limitsof PD and the extremes of TJ (DTJ) may be estimated.Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the zener voltage temperature coefficient, is foundfrom Figures 5 and 6.
Under high power-pulse operation, the zener voltage willvary with time and may also be affected significantly by thezener resistance. For best regulation, keep currentexcursions as low as possible.
Data of Figure 2 should not be used to compute surgecapability. Surge limitations are given in Figure 3. They arelower than would be expected by considering only junctiontemperature, as current crowding effects cause temperaturesto be extremely high in small spots resulting in devicedegradation should the limits of Figure 3 be exceeded.
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1N5913B Series
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
θVZ, TEMPERATURE COEFFICIENT (mV/° C) @ IZT1086420−2−4345678910VZ, ZENER VOLTAGE @ IZT (VOLTS)
1112RANGEθVZ, TEMPERATURE COEFFICIENT (mV/° C) @ IZT1000500200100502010102050100200400VZ, ZENER VOLTAGE @ IZT (VOLTS)
1000Figure 5. Units To 12 Volts
(Figures 7, 8 and 9)
1005030201053210.50.30.20.10
1
2
3
4567VZ, ZENER VOLTAGE (VOLTS)
8
9
10
1005030201053210.50.30.20.10
10
20
Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
I , ZENER CURRENT (mA)ZI , ZENER CURRENT (mA)Z304050607080
VZ, ZENER VOLTAGE (VOLTS)
90100
Figure 7. VZ = 3.3 thru 10 Volts
θJL, JUNCTION-TO-LEAD THERMAL RESISTANCE(° C/W)105I , ZENER CURRENT (mA)Z210.50.20.1
100
150
200250300350VZ, ZENER VOLTAGE (VOLTS)
400
8070605040302010001/8Figure 8. VZ = 12 thru 82 Volts
LTLLPRIMARY PATH OFCONDUCTION IS THROUGHTHE CATHODE LEAD1/43/81/25/83/4L, LEAD LENGTH TO HEAT SINK (INCH)
7/81Figure 9. VZ = 100 thru 400 Volts
Figure 10. Typical Thermal Resistance
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1N5913B Series
PACKAGE DIMENSIONS
AXIAL LEADCASE 59−10ISSUE U
BNOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.ALL RULES AND NOTES ASSOCIATED WITHJEDEC DO−41 OUTLINE SHALL APPLY4.POLARITY DENOTED BY CATHODE BAND.
5.LEAD DIAMETER NOT CONTROLLED WITHIN FDIMENSION.
KFDAPOLARITY INDICATOROPTIONAL AS NEEDED(SEE STYLES)FKDIMABDFK
INCHESMINMAX0.1610.2050.0790.1060.0280.034−−−0.0501.000−−−MILLIMETERS
MINMAX4.105.202.002.700.710.86−−−1.2725.40−−−
STYLE 1:
PIN 1.CATHODE (POLARITY BAND)
2.ANODE
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1N5913B Series
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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