Method for forming metal wiring of semiconductor d

专利名称：Method for forming metal wiring of

semiconductor device

发明人：Byung-Hyun Jung申请号：US11024609申请日：20041230公开号：US07148139B2公开日：20061212

专利附图：

摘要：A method for forming a metal wiring of a semiconductor includes forming aninter metal dielectric layer on a semiconductor substrate having a predetermined lowstructure with a conductive layer. A plurality of contact holes is formed to expose theconductive layer through the inter metal dielectric layer. A first titanium nitride layer isformed on sidewalls of the contact holes. The first titanium nitride layer is plasmaprocessed. A first titanium silicon nitride layer is formed on the first titanium nitride layer.Metal plugs are formed on the first titanium silicon nitride layer. The metal plugs, thefirst titanium silicon nitride layer, and the first titanium nitride layer are polished toexpose the inter metal dielectric layer. Metal wirings are formed to cover the contact

holes.

申请人：Byung-Hyun Jung

地址：Seoul KR

国籍：KR

代理机构：Mayer, Brown, Rowe & Maw LLP

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