专利名称：METHOD AND APPARATUS FOR FORMING
SILICON FILM
发明人：Katsuhiko KOMORI,Mitsuhiro OKADA申请号：US14449744申请日：20140801
公开号：US20150037975A1公开日：20150205
专利附图：
摘要：Provided is a method of forming a silicon film in a groove formed on a surface ofan object to be processed, which includes: forming a first silicon layer on the surface ofthe object to be processed to embed the groove; doping impurities near a surface of the
first silicon layer; forming a seed layer on the doped first silicon layer; and forming asecond silicon layer containing impurities on the seed layer.
申请人：TOKYO ELECTRON LIMITED
地址：Tokyo JP
国籍：JP
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