专利名称：Method for forming self-aligned metal
silicide contacts
发明人：Sunfei Fang,Randolph F. Knarr,Mahadevaiyer
Krishnan,Christian Lavoie,Renee T.
Mo,Balasubramanian Pranatharthiharan,JayW. Strane
申请号：US11415922申请日：20060501
公开号：US20070254479A1公开日：20071101
专利附图：
摘要：The present invention relates to a method for forming self-aligned metalsilicide contacts over at least two silicon-containing semiconductor regions that arespaced apart from each other by an exposed dielectric region. Preferably, each of theself-aligned metal silicide contacts so formed comprises at least nickel silicide andplatinum silicide with a substantially smooth surface, and the exposed dielectric region isessentially free of metal and metal silicide. More preferably, the method comprises thesteps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching,
high-temperature annealing, and aqua regia etching.
申请人：Sunfei Fang,Randolph F. Knarr,Mahadevaiyer Krishnan,Christian Lavoie,Renee T.Mo,Balasubramanian Pranatharthiharan,Jay W. Strane
地址：LaGrangeville NY US,Putman Valley NY US,Hopewell Junction NY US,OssiningNY US,Briarcliff Manor NY US,Elmsford NY US,Wappingers Falls NY US
国籍：US,US,US,US,US,US,US
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