专利名称：Method of manufacturing semiconductor
components
发明人：Martin Kerber,Helmut Klose,Andreas Vom
Felde
申请号：US08/910055申请日：19970812公开号：US05882963A公开日：19990316
摘要：A method of manufacturing a semiconductor component, wherein capacitancesoccurring between contacts, interconnects or metallizations are reduced by filling cavitieswith air or gas is provided. The cavities are produced between the semiconductormaterial and a passivation layer in a region wherein the interconnects are surrounded bydielectric and are subsequently closed by a further passivation layer.
申请人：SIEMENS AKTIENGESELLSCHAFT
代理机构：Hill & Simpson
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