BGA416
RF Cascode Amplifier
MMICWireless
Silicon Discretes
Never stop thinking.
Edition 2002-06-14
Published by Infineon Technologies AG,St.-Martin-Strasse 53,D-81541 München
© Infineon Technologies AG 2002
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BGA416Data sheet
Revision History:Previous Version:Page
2002-06-14 2001-10-30
Subjects (major changes since last revision)Preliminary status removed
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RF Cascode Amplifier BGA416
Features
•GMA = 23dB at 900MHz
•Ultra high reverse isolation, 62 dB at 900MHz•Low noise figure,
F50Ω = 1.3dB at 900MHz•On chip bias circuitry,
5.5 mA bias current at VCC = 3V•Typical supply voltage: 2.5 to 5.0V •SIEGET®-25 technologyApplications
•Buffer amplifiers•LNAs
•Oscillator active devices
GND, 13421VPS05178Description
BGA416 is a monolithic silicon cascodeamplifier with high reverse isolation. Abias network is integrated for simplifiedbiasing.
BiasRFout, 4RFin, 2GND, 3ESD: Electrostatic discharge sensitive device, observe handling precaution!TypeBGA416
Data sheet
PackageSOT143
MarkingC1s
4
ChipT0553
BGA416
Maximum RatingsParameter
Voltage at pin RFoutCurrent into pin RFinDevice current 1)Input power
Total power dissipation, TS < 123°C 2)Junction temperatureAmbient temperature rangeStorage temperature range
Thermal resistance: junction-soldering point
Notes:
All Voltages refer to GND-Node1)
Device current is equal to current into pin RFout2)
TS is measured on the ground lead at the soldering point
SymbolVOUTIINIDPINPtotTjTATSTGRth JS
Value60.5208100150-65 ... +150-65 ... +150
270
UnitVmAmAdBmmW°C°C°CK/W
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1) VCC=3V, unless otherwise specifiedParameter
Maximum available power gainf=0.9GHz
f=1.8GHzInsertion power gainReverse isolationNoise figure (ZS=50Ω)
f=0.9GHzf=1.8GHzf=0.9GHzf=1.8GHzf=0.9GHzf=1.8GHz
SymbolGMA|S21|2|S12|F50ΩP-1dB
min.
typ.2314171162401.31.6-3-3
dBm
14145.5
mA
max.
UnitdBdBdBdBdBm
Output power at 1dB gain compression
f=0.9GHz(ZS=ZL=50Ω)
f=1.8GHzOutput third order intercept point
f=0.9GHz(ZS=ZL=50Ω)
f=1.8GHzDevice current
OIP3
ID
Data sheet5
BGA416
Reference PlaneInGNDVCCI DBias-TOutTop ViewRFinBias-TN.C.RFoutGNDFig. 1: Test Circuit for Electrical Characteristics and S-Parameter
S-Parameter VCC=3V, ID=5.5mA (see Electrical Characteristics for conditions)FrequencyS11[GHz]Mag
0.10.20.40.60.81.01.21.41.61.82.02.43.04.05.06.0
0.78810.78320.69860.63350.56660.51580.47440.45030.42720.42040.40560.40710.41680.46150.54670.6187
Reference PlaneS11
Ang
-6.9-13.3-23.8-31.4-37.3-41.6-44.5-47.4-50.4-53.3-56.4-63.5-78.1-110.1-148.7176.8
S21Mag
12.131011.928010.39408.98677.58056.41875.43504.69574.06073.56863.13532.49571.76870.98390.44510.1983
S21Ang
166.8156.0134.3116.3100.887.776.666.257.549.241.026.76.0-24.7-46.1-21.9
S12Mag
0.00170.00040.00090.00160.00060.00060.00140.00340.00590.00920.01290.02330.04650.10170.17580.2483
S12Ang
10.9-16.641.620.7-5.4-7.2-103.4-132.9-143.2-152.6-156.9-170.1171.9143.4113.084.2
S22Mag
0.89740.88950.87080.84890.81430.77760.72570.68500.65300.61950.58670.52980.45620.38920.38940.4008
S22Ang
-4.9-9.0-17.5-25.7-34.2-42.1-49.6-56.7-64.0-71.1-78.2-92.9-117.4-163.8152.0120.6
Data sheet6
Power Gain |S|2, G VCC = 3V, I D = 5.5mA21ma = f(f) 4035Gma30]B25d[ amG20 ,2|12S|S|2|1521105001234Frequency [GHz] Reverse Isolation |S VCC = 3V, I D = 5.5mA12| = f(f) 0−10−20−30]Bd[ |2−401S|−50−60−70−8001234Frequency [GHz]Data sheetBGA416
Matching |S|, |S| = f(f) VCC = 3V, I11 D = 5.5mA220S22−1−2−3]B−4d[ |S2211S−5| ,|11S|−6−7−8−9−1001234Frequency [GHz] Noise figure F = f(f) V ZCC = 3V, I D = 5.5mAS=50Ω32.52]Bd[1.5 F10.5000.511.522.53Frequency [GHz]7
BGA416
Device Current I = f(V DCC)121110987I [mA]6543210012345 DV [V]CCPackage Outline
BA2.9±0.11.9+0.2acc. toDIN 6784+0.11.1 MAX.0.1 MAX.2.6 MAX.10˚MAX.0.8-0.051.70.4+0.1-0.050.55-0.10.08...0.150.25MB2˚...30˚0.20MAData sheet8
10˚MAX.1.3±0.1
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