Method of making vertical diode structures

专利名称：Method of making vertical diode structures发明人：Fernando Gonzalez,Tyler A. Lowrey,Trung

Tri Doan,Raymond A. Turi,Graham R.Wolstenholme

申请号：US10804477申请日：20040319

公开号：US20040224464A1公开日：20041111

专利附图：

摘要：A method of making a vertical diode is provided, the vertical dioxide havingassociated therewith a diode opening extending through an insulation layer andcontacting an active region on a silicon wafer. A titanium silicide layer covers the interiorsurface of the diode opening and contacts the active region. The diode opening is initiallyfilled with an amorphous silicon plug that is doped during deposition and subsequentlyrecrystallized to form large grain polysilicon. The silicon plug has a top portion that isheavily doped with a first type dopant and a bottom portion that is lightly doped with asecond type dopant. The top portion is bounded by the bottom portion so as not tocontact the titanium silicide layer. For one embodiment of the vertical diode, a

programmable resistor contacts the top portion of the silicon plug and a metal linecontacts the programmable resistor.

申请人：MICRON TECHNOLOGY, INC.

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