IRF7328资料

PD -94000

IRF7328

HEXFET® Power MOSFET

Trench Technology

q Ultra Low On-Resistanceq Dual P-Channel MOSFETq Available in Tape & Reel

q

VDSS-30V

RDS(on) max

21mΩ@VGS = -10V32mΩ@VGS = -4.5V

ID-8.0A-6.8A

Description

New trench HEXFET® Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with theruggedized device design that HEXFET powerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein battery and load management applications.

S1G1S2G21287D1D1D2D23645Top ViewSO-8Absolute Maximum Ratings

Parameter

Max.

Units

VDSDrain-Source Voltage-30VID @ TA = 25°CContinuous Drain Current, VGS @ -10V-8.0ID @ TA = 70°CContinuous Drain Current, VGS @ -10V-6.4AIDMPulsed Drain Current󰂁-32PD @TA = 25°CMaximum Power Dissipation󰂃2.0WPD @TA = 70°CMaximum Power Dissipation󰂃1.3W Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 VTJ , TSTGJunction and Storage Temperature Range-55 to + 150°C

Thermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambient 󰂃 Max. Units 62.5 °C/Wwww.irf.com1

10/04/00

元器件交易网www.cecb2b.com

IRF7328

元器件交易网www.cecb2b.com

IRF7328

元器件交易网www.cecb2b.com

IRF7328

元器件交易网www.cecb2b.com

IRF7328

元器件交易网www.cecb2b.com

IRF7328

元器件交易网www.cecb2b.com

IRF7328

元器件交易网www.cecb2b.com

IRF7328